Dynamic Characterization and Noise Analysis of 4H-SiC Impatt Diode at Ka Band
Joydeep Sengupta1, Girish Chandra Ghivela2, Monojit Mitra3
1Joydeep Sengupta, Department of Electronics Engineering, Visvesvaraya National Institute of Technology, Nagpur, India.
2Girish Chandra Ghivela Department of Electronics Engineering, Visvesvaraya National Institute of Technology, Nagpur, India.
3DR. Monojit Mitra, Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University , Shibpur, Howrah, India.

Manuscript received on March 01, 2014. | Revised Manuscript received on March 04, 2014. | Manuscript published on March 05, 2014. | PP: 145-149 | Volume-4 Issue-1, March 2014. | Retrieval Number: A2119034114/2014©BEIESP
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: The microwave as well as the small signal noise properties on a one dimensional n+npp+ DDR structure 4H-SiC IMPATT Diode have been studied using advanced computer simulation program developed by us and compared at different frequency of Ka band by taking the area of the diode as 8 2 10 m  . Also the theory for the diode current noise associated with the electron hole pair generation and recombination in the space charge region of the diode is presented. This paper can help to know about the small signal behavior as well as noise behavior of IMPATT diode along with power density at the Ka band and will be helpful for designing the 4H-SiC based IMPATT diode depending upon the microwave applications.
Keywords: Impact ionization, efficiency, mean square noise voltage, quality factor, noise spectral density, power density, noise measure.