Numerical Evaluation of Junction Temperature Effect on Negative Resistivity at Different Current Densities of Si DDR IMPATT Device at Sub-millimeterwave Region
Arpan Deyasi1, Swapan Bhattacharyya2 

1Arpan Deyasi, Department of Electronics & Communication Engineering, RCC Institute of Information Technology, Kolkata, India.
2Swapan Bhattacharyya, Department of Computer Science & Engineering, Asansol Engineering College, Asansol, India.
Manuscript received on December 03, 2011. | Revised Manuscript received on December 18, 2011. | Manuscript published on January 05, 2012. | PP: 145-148 | Volume-1 Issue-6, January 2012. | Retrieval Number: F0286111611/2012©BEIESP
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Abstract: Negative resistivity profile for Si DDR IMPATT device is numerically computed by double-iterative method with incorporation of modified Runge-Kutta method at different junction temperatures and bias current densities for different operating frequency bands in sub-millimeter wave region. Profiles are obtained throughout the depletion layer width for 1-D model consideration and assuming independence of carrier velocities over electric field in avalanche and drift regions; whereas both conduction and displacement current densities are taken into account. Analysis is helpful for comparative study of device performance with different heat sink materials.
Keywords: Current density, Junction temperature, Negative resistance, Small-signal analysis.