Performance Analysis of an in GaAs Based p-i-n Photodetector
Diponkar Kundu1, Dilip Kumar Sarker2, Md. Galib Hasan3, Pallab Kanti Podder4, Md. Masudur Rahman5
1Department of Electrical and Electronic Engineering, Pabna Science & Technology University, Pabna-6600, Bangladesh.
2Department of Electrical and Electronic Engineering, Pabna Science & Technology University, Pabna-6600, Bangladesh.
3Department of Electrical and Electronic Engineering, Pabna Science & Technology University, Pabna-6600, Bangladesh.
4Department of Information and Communication Engineering, Pabna Science & Technology University, Pabna-6600, Bangladesh.
5Department of Electrical and Electronic Engineering, Pabna Science & Technology University, Pabna-6600, Bangladesh.
Manuscript received on February 15, 2012. | Revised Manuscript received on February 20, 2012. | Manuscript published on March 05, 2012. | PP: 316-321 | Volume-2 Issue-1, March 2012. | Retrieval Number: A0443022112 /2012©BEIESP
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: an InGaAs based p-i-n photodetector model is chosen in order to find out quantum efficiency, photocurrent density, and normalized frequency response with and without RC effect. Normalized frequency response is the most important factorin order to analysis the performance of p-i-n photodetector. Quantum efficiency, photocurrent density, normalized frequency response curves are obtained by formulation which is done from structure and MATLAB simulation. A relation for the fiber-to-waveguide coupling efficiency has also been used to calculate the overall quantum-efficiency of waveguide photodetector [1]. Normalized frequency response is obtained by varying value of frequency dependent transfer function of equivalent circuit model of p-i-n photodetector with frequency. For enhancing bandwidth of photodetector, the parametric values of photodetector such as reverse bias junction capacitance and resistance, has been optimized. The effect of carrier trapping at a heterointerface has also been considered to study the frequency dependence of the photocurrent at low-bias voltages [1].
Keywords: P-i-n photodetector, quantum efficiency, photocurrent density, normalized frequency response.