Calculated and Measured Dark Conductivity in P-Type Polycrystalline CdTe Thin Films
H. Mohssine1, H. Bouhouch2, F. Debbagh3
1Hassan Mohssine, Professor, High School of technology, Lasime Laboratory, Agadir, Morocco.
2Houcine Bouhouch, Professor, High School of technology, Agadir Morocco.
3Fouad Debbagh, Professor, LPSCM Laboratory, Marrakech Morocco.
Manuscript received on February 18, 2015. | Revised Manuscript received on February 28, 2015. | Manuscript published on March 05, 2015. | PP: 134-136 | Volume-5 Issue-1, March 2015. | Retrieval Number: A2544035115/2015©BEIESP
Open Access | Ethics and Policies | Cite
©The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/
Abstract: In this study we describe a numerical procedure for modeling the dark conductivity in a p-type polycrystalline Cadmium Telluride (CdTe). We base our approach on the comparison between measured and computed conductivity. For this purpose, the Fermi-Dirac statistic combined with the numerical solution of the charge neutrality equation allows to calculate the exact dark conductivity as function of the temperature. The results are then used to fit the experimental conductivity. Measures have been undertaken on CdTe thin films produced by r-f sputtering on glass substrates at room temperatures. It is shown that the amount of the experimental conductivity can be modeled, Quito precisely, by suitably choosing parameters of localized states, without needing complicated approaches like Mott and seto’s models. However, from a point of view of experimental fitting, it is verified, in accordance with our previous general treatment that the model’s parameters are not unique and cannot be derived from Arrhenius diagram analyses.
Keywords: Thins films, CdTe, Sputtering, Conductivity.