Modeling and Simulation of Triple Metal Cylindrical Surround Gate MOSFETs for Reduced Short Channel Effects
Santosh Kumar Gupta1, S. Baishya2
1Santosh Kumar Gupta, Department of Electronics and Communication Engineering Department, National Institute of Technology Silchar, Silchar, India.
2S. Baishya, Department of Electronics and Communication Engineering Department, National Institute of Technology Silchar, Silchar, India,
Manuscript received on April 15, 2012. | Revised Manuscript received on April 20, 2012. | Manuscript published on May 05, 2012. | PP: 214-221 | Volume-2 Issue-2, May 2012 . | Retrieval Number: B0557042212/2012©BEIESP
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Due to the continuous scaling of the MOS transistors it has become absolute necessary to investigate for the new transistor architectures for better control of SCEs and HCEs. In literature triple metal and double metal gate structure has been proposed to reduce the SCEs and HCEs due to scaling of the MOS transistors. The double metal and triple metal structures screen the effect of drain voltage change on the source/channel barrier reducing the SCE. The triple metal gate structure however induces an electrical junction on source and drain side which works as ultra shallow source/drain junctions. Since the surround gate structures have been found to have best control over the channel a cylindrical surround gate structure with triple metal was recently proposed by Cong Li et al. In this paper we present the physically based analytical model for the surface potential of triple metal cylindrical surround gate MOSFET. The model takes into account for the drift-diffusion currents and continuity equations. In the latter part of the paper some 2D simulation results of triple metal gate MOS transistor has been shown. The device has also been explored for the suitable channel doping in terms of subthreshold slope, DIBL, transconductance etc.
Keywords: Cylindrical Surround Gate MOSFETs, Surface Potential, TCAD, Short Channel Effects, Analog.