Analysis of Ka Band DDR Impatt Diode Based On Different Solidstate Materials
A. Banerjee1, M. Mitra2

1A. Banerjee ECE  Department MCKV Institute of Engineering,, Kolkata, WB, India.
2M. Mitra Department of E&TC Engg, BESU, Shibpur, Howrah , W.B, India.
Manuscript received on April 04, 2013. | Revised Manuscript received on April 27, 2013. | Manuscript published on May 05, 2013. | PP: 6-10 | Volume-3, Issue-2, May 2013. | Retrieval Number: B0551042212/2012©BEIESP
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Abstract: IMPATT diode is a p n   junction diode reversed bias to breakdown and can generate microwave power when embedded in a resonant cavity. From the date of its inception it is increasingly proving its worth as a prime solid state source for microwave and mm-wave frequency. The available structures of IMPATT are SDR, DDR, DAR, lo-high-lo, etc which shows gradually better efficiency and power output for different materials like Wz-GAN, InP, GaAs, Si, Ge. A detailed study in terms of the following parameters like (i) Electric field profile [E(x)] (ii) Normalized current density profile [P(x)] (iii) Doping Profile (iv)Susceptance Vs Conductance characteristics (v) RF power output (vi) Negative resistivity profile [R(x)] (vii) Quality factor profile [Q(x)] of the diodes through simulation scheme. It is being observed that the wide band gap semiconductors are with higher efficiency (12.09 %) compare to normal Si, Ge at Ka-band and because of the relatively high breakdown voltage also power output is highest as 14.3142 W for InP compare to other material.
Keywords: Ka-band IMPATT, IMPATT with wide band gap materials, DDR IMPATT, Small signal Analysis of Ka band IMPATT.