Analytical Discussion of Single Electron Transistor (SET)
Vinay Pratap Singh1, Arun Agrawal2, Shyam Babu Singh3

1Vinay Pratap Singh, M.Tech. Student, I.T.M. Universe, Gwalior.
2Arun Agrawal, Assistant Professor, CS deptt., I.T.M. University, Gwalior (M.P.), India
3Shyam Babu Singh, Assistant Professor, EI deptt., I.T.M. Universe, Gwalior (M.P.), India

Manuscript received on July 01, 2012. | Revised Manuscript received on July 04, 2012. | Manuscript published on July 05, 2012. | PP: 502-507 | Volume-2, Issue-3, July 2012. | Retrieval Number: C0831062312/2012©BEIESP
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Abstract: Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its scalability even on an atomic scale and besides this; it can control the motion of a single electron. Here, scalability means that the performance of electronic devices increases with a decrease of the device dimensions. Since, Power consumption is roughly proportional to the electron number transferred from voltage source to the ground in various logic operations. Therefore, the singleelectron transistor [SET] is generally utilized as an ULSI element to reduce the power consumption of ULSIs. Thus, the Single electron transistor [SET] can offer low power consumption and the controlled tunneling of a single electron makes its high operating speed. The goal of this paper is to discuss about the basic physics of nano electronic device ‘Single electron transistor [SET]’ which is capable of controlling the transport of only one electron. In this paper, we also focus on some basic device characteristics like ‘Coulomb blockade’, single electron tunneling effect & ‘Coulomb staircase’ on which this Single electron transistor [SET] works and the basic comparison of SET & FET characteristics and also its [SET] advantages as well as disadvantages to make a clear picture about the reason behind its popularity in the field of nanoelectronics.

Keywords: Coulomb blockade, Classical theory, Quantum dot, single electron tunneling.