High Temperature Electrical Characterization of Single Crystal of N-Type CDSE Optimally Annealed in a molten CD
Pankaj Varshney, Department of Physics, SRM University, NCR Campus Modinagar-201204, India.
Manuscript received on September 01, 2012. | Revised Manuscript received on September 02, 2012. | Manuscript published on September 05, 2012. | PP: 275-278 | Volume-2 Issue-4, September 2012. | Retrieval Number: D0947082412/2012©BEIESP
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this paper high quality single crystal of n-type CDSE is grown from the vapor phase by the piper polich method. X-ray laue photographs from different directions are taken. DC galvanomagnetic properties are measured and analyzed in the temperature range 75 to 450 K in an undoped single crystal of ntype CDSE, which was optimally annealed in high purity molten CD at 850 0C for a period of ~ 400 h. α- the polaron coupling constant is estimated from the measured Hall mobility (µH ) data at low and intermediate temperature by identifying a temperature region, wherein only the polar optical phonon scattering operates in the conduction band. The deformation potential Eb in the conduction band of CDSE is obtained from the measured µH data in the temperature region wherein the deformation potential also operates effectively. It is shown that a change in the microscopic mobility through photo excitation indicate a change in scattering.
Keywords: CDSE, Methodology