Effect of Post-Deposition Annealing on Hydrogenated Amorphous Silicon Thin Films Grown At High Power by Pecvd
Aravind Kumar1, Pawan Kumar2, Parmender Kumar3, Kapil Malik4, P. N. Dixit5
1Aravind Kumar, Department of Physics Kalindi College East Patel Nager New Delhi-110008., India.
2Pawan Kumar, Department of Physics Gurukula Kangri Vishwavidyalaya, Haridwar-249404, India.
3Parmender Kumar, Department of Physics Gurukula Kangri Vishwavidyalaya, Haridwar-249404, India.
4Kapil Malik, Department of Physics Gurukula Kangri Vishwavidyalaya, Haridwar-249404, India.
5P.N. Dixit, Plasma Processed Materials Group National Physical LaboratoryDr. K.S. Krishnan Road, New Delhi-110 012
Manuscript received on January 01, 2013. | Revised Manuscript received on January 02, 2013. | Manuscript published on January 05, 2013. | PP: 516-419 | Volume-2, Issue-6, January 2013. | Retrieval Number: F1176112612/2013©BEIESP
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The crystallization of hydrogenated amorphous silicon layers (a-Si:H) [1,2] deposited by plasma enhanced chemical vapor deposition (PECVD) is of great interest. Generally, laser or metals are used to induce crystallization in aSi:H films. We have found that films deposited at high rf power (> 0.2 W/cm2) by PECVD technique shows some crystallites embedded in a-Si:H matrix and their after its vacuum thermal annealing at 250 and 300 oC helps to further enhancement of crystallite size. These films were characterized using , UV-VIS spectrometry, Raman Spectra, of these films were measured as a function of temperature in the range of 300 oC to 250 oC.
Keywords: Amorphous silicon, Thin Films, Growth PECVD.