InGaAs/GaAs HEMT for High Frequency Applications
N V Uma Reddy1, M V Chaitanya Kumar2
1N V Uma Reddy, Electronics and Communication Engg. Research Scholar, VTU, Bangalore, Karnataka, India
2Dr M V Chaitanya Kumar, Professor and Principal, BIT, Mangalore, Karnataka India.
Manuscript received on February 09, 2013. | Revised Manuscript received on February 27, 2013. | Manuscript published on March 05, 2013. | PP: 16-20 | Volume-3 Issue-1, March 2013. | Retrieval Number: A1277033113/2013©BEIESP
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In the modern VLSI especially for high speed devices, where the conventional MOSFET technology is reaching its limitations due to various short channel effects and velocity saturation effects etc, hetero-junction FETs have shown great promise for high speed devices. Novel HEMT device using heterojunctions made of and on a substrate is designed and modeled using TCAD software. Highly doped deep source-drain implants are proposed for the design. The device simulations have demonstrated its utility towards high frequency applications in GHz range.