Design of CNTFET-Based Invertor Inspired BiCMOS Technology
Hossein Etemadi1, Morvarid F. Dabiri2, Peiman Keshavarzian3, Tahere Panahi4
1Hossein Etemadi, Department of Computer Engineering, Science and Research Branch, Islamic Azad University, Kerman, Iran.
2Morvarid F. Dabiri, Department of Computer Engineering, Science and Research Branch, Islamic Azad University, Kerman, Iran.
3Peiman Keshavarzian, Department of Computer Engineering, Kerman Branch, Islamic Azad University, Kerman, Iran.
4Tahere Panahi, Department of Computer Engineering, Kerman Branch, Islamic Azad University, Kerman, Iran.
Manuscript received on April 11, 2012. | Revised Manuscript received on April 14, 2012. | Manuscript published on May 05, 2012. | PP: 305-308 | Volume-2 Issue-2, May 2012 . | Retrieval Number: B0607042212/2012©BEIESP
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this paper we present a new combination of Carbon NanoTube Field Effect Transistors (CNTFETs) and bipolar transistors which named Bi CNTFET and used to design a fast and low power inverter. New inverter proposes and compare to existing Bipolar-CMOS (BiCMOS) design. Propose Bi CNTFET inverter has advantages such as large load drive capabilities, low static power dissipation, fast switching and high input impedance. Extensive simulation using HSPICE to investigate the power consumption and delay of propose inverter. Simulation result shows that the propose inverter using carbon nanotube has better performance in terms of delay and power consumption, in compared to BiCMOS counterpart. Furthermore the new design reduces the chip area because of using carbon nanotubes.
Keywords: CNTFET, Nanoelectronic, Bi-CNTFET.